Found 5 relevant results in 1.96s where lecturer="Andreas Schenk"

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227-0056-00L 2004S , 2005S , 2006S , 2007S , 2008S , 2020S , 2021S , 2022S , 2023S , 2024S , 2025S , 2026S 4 Credits BSC D-ITET

The course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both of the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs and laser diodes.

2004S
2005S
2006S
2007S
2008S
2020S
2021S
2022S
2023S
2024S
2025S
227-0659-00L 2007S , 2007W , 2008S , 2008W , 2020S , 2020W , 2021W , 2022W , 2023S , 2023W , 2024S , 2024W , 2025S , 2025W , 2026S , 2026W 1 Credits MSC D-ITET

In this edition of the Integrated Systems Seminar, members of the Digital Circuits and Systems group give technical presentations on their work in an environment that simulates a technical conference andinteract with the audience. In addition, short tutorial lectures will be given to support students for their dissemination activities.

2007S
2007W
2008S
2008W
2020S
2020W
2021W
2022W
2023S
2023W
2024S
2024W
2025S
2025W
2026W
227-0157-00L 2003W , 2004W , 2005W , 2006W , 2007W , 2008W , 2020W , 2021W , 2022W , 2023W , 2024W , 2025W , 2026W 4 Credits DR , MSC D-MAVT , D-MATH , D-PHYS , D-ITET , D-MATL

The course addresses the physical principles of modern semiconductor devices and the foundations of their modeling and numerical simulation. Necessary basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. Computer simulations of the most important devices and of interesting physical effects supplement the lectures.

2003W
2004W
2005W
2006W
2007W
2008W
2020W
2021W
2022W
2023W
2024W
2025W

Semiconductor Transport Theory and Monte Carlo Device Simulation

Halbleitertransporttheorie und Monte Carlo Bauelementesimulation

227-0158-00L 2004S , 2005S , 2006S , 2007S , 2008S 4 Credits BSC , MSC D-ITET , D-MATH , D-MAVT

The first part deals with semiconductor transport theory including the necessary quantum mechanics.In the second part, the Boltzmann equation is solved with the stochastic methods of Monte Carlo simulation.The exercises address also TCAD simulations of MOSFETs. Thus the topics include theoretical physics,numerics and practical applications.

2004S
2005S
2006S
2007S

Semiconductor Transport Theory and Monte Carlo Device Simulation

Halbleitertransporttheorie und Monte Carlo Bauelementesimulation

35-158 2003S 3 Credits

No description available.