VVZ API is not affiliated with ETH Zurich. Data might be outdated or incorrect. Please view the official ETHZ Vorlesungsverzeichnis for binding information.
Semiconductor Devices: Physical Bases and Simulation
Halbleiter-Bauelemente: Physikalische Grundlagen und Simulation
Last Updated: 2026-02-05 14:53:06
Objective
This course aims at the understanding of the principle physics of modern electronic semiconductor devices based on silicon, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided.
Content
The main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator- semiconductor structure, and hetero junctions. The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, and MOSFET. Numerical simulations of such devices are performed with an advanced simulation package. This enables to understand the physical effects by means of computer experiments.
Resources
Lecture Notes
The script can be downloaded from:http://www.iis.ee.ethz.ch/˜schenk/vorlesung
General Information
- Language
- German
- Frequency
- Yearly recurring
Examination
- Type
- session examination
- Mode
- oral 30 minutes
Course Components
| Type | Title | Time & Place | Hours |
|---|---|---|---|
| lecture with exercise | Halbleiter-Bauelemente: Physikalische Grundlagen und Simulation |
|
3 h weekly |