VVZ API is not affiliated with ETH Zurich. Data might be outdated or incorrect. Please view the official ETHZ Vorlesungsverzeichnis for binding information.

227-0056-00L 4 Credits BSC D-ITET
You're viewing possible stale or outdated data. Please check the latest semester for more up-to-date information.

Semiconductor Devices

Halbleiterbauelemente

Lecturers & Examiners: Prof. Dr. Colombo Bolognesi, Dr. Tamara Popovic
VVZ CR 4.6

Last Updated: 2026-06-01 11:33:20

Abstract

The course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both of the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs and laser diodes.

Objective

Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics.

Content

Brief survey of the history of microelectronics. Basic physics: Crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R), Quasi-Fermi levels. Physical and electrical properties of the pn-junction. pn-diode: Characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown. MOS devices: Band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and non-ideal behaviour. Bipolar transistor: Operation principles, modes of operation, characteristics, models, simulation.

Resources

Lecture Notes

Lecture slides.

Literature

The course follows the book Modern Semiconductor Devices for Integrated Circuits by Chenming Hu. More detailed book: Neamen, Semiconductor Physics and Devices, ISBN 978-007-108902-9, Fr. 89.00

Learning Materials (Links)

General Information

Language
English
Levels
BSC
Frequency
Yearly recurring

Examination

Type
session examination
Mode
written 180 minutes
Aids
Lecture Slides and Exercise Slides, Exercise Problems with solutions; Student's course summary (unlimited number of pages); Pocket calculator (Taschenrechner) with no communication capabilities.
An optional midterm exam (organized if the current epidemiological situation allows) counts for 25% of the final grade if this improves the final grade.Participation to the exercise sessions is rewarded with up to 0.25 points in the sense of the learning elements. Important: It is expected that you attend the sessions and solve the exercises. To assess your participation optional short tests (~15 min) will be implemented via moodle during the exercise sessions. Tests will have simple questions that check the material concepts, and will be organized on four random dates. Those who satisfactorily solved at least 3 tests (out of 4) will receive a 0.25 grade point credit.

Course Components

Type Title Time & Place Hours
lecture Halbleiterbauelemente
  • Wed 10:15-12:00 (NO C 60)
2 h weekly
exercise Halbleiterbauelemente
  • Mon 16:15-18:00 (ETZ E 8)
  • Mon 16:15-18:00 (ETZ H 91)
  • Mon 16:15-18:00 (LFW B 1)
  • Mon 16:15-18:00 (LFW C 5)
2 h weekly

Offered In