VVZ API is not affiliated with ETH Zurich. Data might be outdated or incorrect. Please view the official ETHZ Vorlesungsverzeichnis for binding information.
Semiconductor Transport Theory and Monte Carlo Device Simulation
Halbleitertransporttheorie und Monte Carlo Bauelementesimulation
Last Updated: 2026-02-05 15:02:43
Objective
On the one hand, the link between microscopic physics and its concrete application in device simulation is established; on the other hand, emphasis is also laid on the presentation of the numerical techniques involved.
Content
Quantum theoretical foundations I (state vectors, Schroedinger and Heisenberg picture). Band structure (Bloch theorem, one dimensional periodic potential, density of states). Pseudopotential theory (crystal symmetries, reciprocal lattice, Brillouin zone).
Semiclassical transport theory (Boltzmann transport equation (BTE), scattering processes, linear transport).
Monte Carlo method (Monte Carlo simulation as solution method of the BTE, algorithm, expectation values).
Implementational aspects of the Monte Carlo algorithm (discretization of the Brillouin zone, self-scattering according to Rees, acceptance- rejection method etc.). Bulk Monte Carlo simulation (velocity-field characteristics, particle generation, energy distributions, transport parameters). Monte Carlo device simulation (ohmic boundary conditions, MOSFET simulation).
Quantum theoretical foundations II (limits of semiclassical transport theory, quantum mechanical derivation of the BTE, Markov-Limes).
Resources
Lecture Notes
yes
General Information
- Language
- German
- Frequency
- Yearly recurring
Examination
- Type
- session examination
- Mode
- oral 30 minutes
Course Components
| Type | Title | Time & Place | Hours |
|---|---|---|---|
| lecture | Halbleitertransporttheorie und Monte Carlo Bauelementesimulation |
|
2 h weekly |
| exercise | Halbleitertransporttheorie und Monte Carlo Bauelementesimulation |
|
1 h weekly |