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227-0056-00L 4 Credits BSC , MSC D-ITET , D-MATH
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Semiconductor Devices

Halbleiterbauelemente

Lecturers & Examiners: Prof. Dr. Colombo Bolognesi
VVZ CR 4.6

Last Updated: 2026-02-05 15:41:17

Abstract

The course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both of the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs and laser diodes.

Objective

Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics.

Content

Brief survey of the history of microelectronics. Basic physics: Crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R), Quasi-Fermi levels. Physical and electrical properties of the pn-junction. pn-diode: Characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown. Contacts: Schottky contact, rectifying barrier, Ohmic contact, Heterojunctions. Bipolar transistor: Operation principles, modes of operation, characteristics, models, simulation. MOS devices: Band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and non-ideal behaviour. Optoelectronic devices: Optical absorption, solar cells, photodetector, LED, laser diode.

Resources

Lecture Notes

Lecture slides.

Literature

The lecture course follows the book Neamen, Semiconductor Physics and Devices, ISBN 978-007-108902-9, Fr. 89.00

Learning Materials (Links)

General Information

Language
English
Levels
BSC , MSC
Frequency
Yearly recurring

Examination

Type
session examination
Mode
written 180 minutes
Aids
Lecture Slides and Exercise Problems with solutions; Student's own course summary (i.e. 2 sheets both sides = 4-pages); Pocket calculator (Taschenrechner) with no communication capabilities.
An optional midterm exam counts for 25% of the final grade if this improves the final grade.Participation to the exercise sessions is rewarded with up to 0.25 points in the sense of the learning elements. Important: It is expected that you solve the exercises. As an incentive, student exercise solutions will be collected on 3 random dates. Those who satisfactorily solved at least 2 exercise sets will receive a 0.25 grade point credit.

Course Components

Type Title Time & Place Hours
lecture Halbleiterbauelemente
  • Wed 10:15-12:00 (NO C 60)
2 h weekly
exercise Halbleiterbauelemente
  • Mon 16:00-17:00 (ER SA TZ)
  • Mon 16:15-17:00 (ETF C 1)
  • Mon 16:15-17:00 (ETF E 1)
  • Mon 16:15-19:00 (ETZ E 9)
  • Mon 16:15-19:00 (ETZ F 91)
  • Mon 16:15-19:00 (ETZ G 91)
  • Mon 16:15-19:00 (ETZ H 91)
  • Mon 16:15-19:00 (HG D 3.1)
  • Mon 16:15-19:00 (HG D 3.3)
  • Mon 17:00-18:00 (ER SA TZ)
  • Mon 17:15-18:00 (ETF C 1)
  • Mon 17:15-18:00 (ETF E 1)
  • Mon 18:15-19:00 (ETF C 1)
  • Mon 18:15-19:00 (ETF E 1)
2 h weekly

Offered In