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227-0157-00L 4 Credits BSC , MSC D-ITET , D-PHYS , D-MATH , D-MAVT
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Semiconductor Devices: Physical Bases and Simulation

Halbleiter-Bauelemente: Physikalische Grundlagen und Simulation

Lecturers & Examiners: Prof. em. Dr. Andreas Schenk
VVZ CR n/a

Last Updated: 2026-02-05 15:14:49

Abstract

The course addresses the physical principles of modern semiconductor devices and the foundations of their modeling and numerical simulation. Necessary basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. Computer simulations of the most important devices and of interesting physical effects supplement the lectures.

Objective

The course aims at the understanding of the principle physics of modern semiconductor devices, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided.

Content

The main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator-semiconductor structure, and heterojunctions. The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, MOSFET, and laser. Numerical simulations of such devices are performed with an advanced simulation package (Sentaurus-Synopsys). This enables to understand the physical effects by means of computer experiments.

Resources

Lecture Notes

The script (in book style) can be downloaded from:http://www.iis.ee.ethz.ch/˜schenk/vorlesung.

Literature

The script (in book style) is sufficient. Further reading will be recommended in the lecture.

General Information

Language
German
Levels
BSC , MSC
Frequency
Yearly recurring

Examination

Type
session examination
Mode
oral 30 minutes

Course Components

Type Title Time & Place Hours
lecture with exercise Halbleiter-Bauelemente: Physikalische Grundlagen und Simulation
  • Mon 09:15-12:00 (ETZ G 91)
3 h weekly

Offered In