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227-0056-00L 4 Credits
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Seminconductor devices

Halbleiterbauelemente

Lecturers & Examiners: Prof. em. Dr. Andreas Schenk
VVZ CR 4.6

Last Updated: 2026-02-05 15:10:16

Abstract

The lecture course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both on the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs, laser diodes, and power devices.

Objective

Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics.

Content

Brief survey of the history of microelectronics. Basic physics: Crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R), Quasi-Fermi levels. Physical and electrical properties of the pn-junction. pn-diode: Characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown. Contacts: Schottky contact, rectifying barrier, Ohmic contact, Heterojunctions. Bipolar transistor: Operation principles, modes of operation, characteristics, models, simulation. MOS devices: Band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and nonideal behaviour. Optoelectronic devices: Optical absorption, solar cells, photodetector, LED, laser diode. Power devices: Types, modes of operation, static and dynamic behaviour.

Resources

Lecture Notes

Script of the slides + animated simulations on CD.

Literature

The lecture course follows the book "Semiconductor Physics and Devices" by Donald A. Neamen: ISBN 0-07-232107-5.

General Information

Language
German
Frequency
Yearly recurring

Examination

Type
session examination
Mode
written 150 minutes
Aids
Sämtliche schriftlichen Unterlagen, Taschenrechner

Course Components

Type Title Time & Place Hours
lecture Halbleiterbauelemente
  • Wed 10:15-12:00 (ETF C 1)
2 h weekly
exercise Halbleiterbauelemente
  • Mon 15:15-16:00 (ETF C 1)
  • Mon 15:15-16:00 (ETF E 1)
  • Mon 15:15-16:00 (ETZ E 9)
  • Mon 15:15-16:00 (ETZ H 91)
  • Mon 15:15-16:00 (ETZ J 91)
  • Mon 15:15-16:00 (ETZ K 91)
  • Mon 15:15-16:00 (HG D 3.1)
  • Mon 15:15-16:00 (HG D 3.3)
1 h weekly

Offered In