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Abstract
The course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both of the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs and laser diodes.
Objective
Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics.
Content
Brief survey of the history of microelectronics. Basic physics: Crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R), Quasi-Fermi levels. Physical and electrical properties of the pn-junction. pn-diode: Characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown. MOS devices: Band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and non-ideal behaviour. Bipolar transistor: Operation principles, modes of operation, characteristics, models, simulation.
Resources
Lecture Notes
Lecture slides.
Literature
The course follows the book Modern Semiconductor Devices for Integrated Circuits by Chenming Hu. More detailed book: Neamen, Semiconductor Physics and Devices, ISBN 978-007-108902-9, Fr. 89.00