Advanced EUV Lithography: Plasma Physics and Particle Interactions

Abstract

The primary goal of this course is to provide students with an understanding of EUV lithography, focusing on the principles of plasma physics and particle interactions.

Objective

· Comprehend the fundamental principles of lithography, · Analyze various optics and illumination settings · Understand the role of plasma physics in EUV lithography, · Evaluate the interactions of particles, including charging, creation, transport, and their impact on yield and wafer quality.

Content

This course provides a plasma-focused introduction to EUV lithography. While foundational lithography concepts are briefly introduced to provide context, the course centers on the physical processes occurring within and around low-pressure plasmas in EUV systems. Participants will examine how plasma-generated species interact with surrounding materials, exploring both gas-phase and surface phenomena. Alongside this, the course investigates the mechanisms of particle formation, release and transport, highlighting how particles emerge in plasma environments and how their movement can affect contamination control, yield, and wafer quality. Electrostatic effects are treated as a fundamental aspect of plasma behavior. Topics such as charge accumulation, sheath formation, and electrostatic discharge phenomena are discussed in relation to their roles in particle charging, plasma confinement, and surface interactions. To support conceptual understanding, the course briefly introduces simulation techniques such as particle-in-cell (PIC) modeling, offering insight into how these complex phenomena can be studied in EUV-relevant conditions.

Resources