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227-0621-00L 3 Credits MSC D-MATL , D-MAVT , D-PHYS , D-ITET , D-HEST
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Emerging Memory Technologies

Lecturers & Examiners: Prof. Dr. Maksym Yarema
VVZ CR n/a

Last Updated: 2026-02-05 16:30:14

Abstract

This course focuses on the current state and prospects of memory technologies, emerging beyond the silicon transistor era. We explore resistive PCM and RRAM, magnetic MRAM and ferroelectric FRAM memories, covering physics, device aspects and the latest research in the field. Through interactive lectures and laboratory sessions, students gain up-to-date knowledge and compare emerging memory techs.

Objective

In this course, students will learn about the leading contenders for post-silicon storage-class and main memory technologies. Decades of research have yielded several efficient memory device working principles, including phase-change of the structure (PCM), materials conversion (OxRAM), ion diffusion (CBRAM), magnetic properties (STT-MRAM, MTJ), and ferroelectricity (FRAM, FeFET). Currently, these memory technologies are transitioning from research to industry, and are predicted to have at least niche applications in the ever-growing hardware market. Some technologies, such as PCM, may even eventually surpass silicon-based flash memory, providing better performance and unique features. Students will have the opportunity to compare emerging memory technologies with state-of-the-art SSD Flash, DRAM, and SRAM, as well as evaluate their potential. Through critical thinking discussions, students will acquire important skills for assessing the strengths and limitations of these emerging technologies.

Content

The course is organized as a series of lectures, focusing on selected memory technologies. This class also includes practical laboratory sessions for the PCM research topics. Students will spend 2 hours per week in the class or laboratory and additional 2-3 hours per week to prepare for the exam.

Resources

Literature

Lecture notes will be made available on the website.

General Information

Language
English
Levels
MSC
Frequency
Yearly recurring

Examination

Type
graded semester performance
The course grade will be determined by a final exam, which will cover topics discussed in class as well as in the suggested literature. The exam questions will be reviewed in class. The attendance is thus highly recommended.

Course Components

Type Title Time & Place Hours
lecture Emerging Memory Technologies
  • Mon 16:15-17:00 (ETZ E 9)
1 h weekly
exercise Emerging Memory Technologies
  • Mon 17:15-18:00 (ETZ E 9)
1 h weekly

Offered In