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227-0156-00L 6 Credits BSC , MSC D-ITET
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Power Semiconductors

VVZ CR n/a

Last Updated: 2026-02-05 16:21:49

Abstract

Power semiconductor devices are the core of today's energy efficient electronics. In this course, an understanding of the functionality of modern power devices is developed. Typical device concepts for power rectifiers and transistors are discussed. In addition to silicon-based devices, wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are considered.

Objective

The goal of this course is to develop an understanding of modern power device concepts. After following the course, the student will be able to choose a power device for an application, know the basic functionality, and is able to describe the performance and reliability related building blocks of the device design. Furthermore, the student will have an understanding of current and future developments in power devices.

Content

• Basic semiconductor physics concepts • Device design/conceptual thinking • Device simulation (TCAD) • Device processing • Diodes • BJT and JFET • Thyristor • MOSFET and power MOSFET • IGBT and HEMT • Packaging and Applications

Resources

Lecture Notes

Script will be made available via Moodle, printouts of the slides will be distributed during the lectures.

Literature

The course follows a collection of different books; more details are being listed in the script.

General Information

Language
English
Levels
BSC , MSC
Frequency
Yearly recurring

Examination

Type
session examination
Mode
written 180 minutes
Aids
Personal summary (max. 2 A4 pages, single-sided), non-programmable calculator or calculator in exam mode, no communication devices.
In addition to the final grade, a maximum bonus of 0.25 can be obtained as follows:- 0.10 for a quiz on Moodle,- 0.15 for a laboratory report.

Course Components

Type Title Time & Place Hours
lecture with exercise Power Semiconductors
  • Tue 14:15-16:00 (CAB G 59)
  • Tue 16:15-18:00 (CAB G 59)
4 h weekly

Offered In