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227-0158-00L 4 Credits BSC , MSC D-ITET , D-MAVT , D-MATH , D-PHYS

Semiconductor Devices: Transport Theory and Monte Carlo Simulation

Does not take place this semester. The course was offered for the last time in HS19.
VVZ CR n/a

Last Updated: 2026-02-05 15:35:18

Abstract

The lecture combines quasi-ballistic transport theory with application to realistic devicesof current and future CMOS technology.All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques tosolve the Boltzmann equation are introduced. In the exercises advanced devices suchas FinFETs and nanosheets are simulated.

Objective

The aim of the course is a fundamental understanding of the derivation of the Boltzmann equation and its solution by Monte Carlo methods. The practical aspect is to become familiar with technology computer-aided design (TCAD) and perform simulations of advanced CMOS devices.

Content

The covered topics include: - quantum mechanics and second quantization, - band structure calculation including the pseudopotential method - phonons - derivation of the Boltzmann equation including scattering in the Markov limit - stochastic Monte Carlo techniques to solve the Boltzmann equation - TCAD environment and geometry generation - Stationary bulk Monte Carlo simulation of velocity-field curves - Transient Monte Carlo simulation for quasi-ballistic velocity overshoot - Monte Carlo device simulation of FinFETs and nanosheets

Resources

Lecture Notes

Lecture notes (in German)

Literature

Further reading will be recommended in the lecture.

Learning Materials (Links)

General Information

Language
English
Levels
BSC , MSC
Frequency
Yearly recurring

Examination

Type
session examination
Mode
oral 30 minutes

Course Components

Type Title Time & Place Hours
lecture with exercise Semiconductor Devices: Transport Theory and Monte Carlo Simulation
Does not take place this semester.
No time listed 30 h semesterly

Offered In