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227-0156-00L 6 Credits BSC , MSC D-ITET

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Power Semiconductors

Lecturers & Examiners: Prof. Dr. Ulrike Grossner

VVZ CR n/a

Last Updated: 2026-02-05 15:40:48

Abstract

Power semiconductor devices are the core of today's energy efficient electronics. In this course, based on semiconductor physics, an understanding of the functionality of modern power devices is developed. Elements of power rectifiers and switches are introduced; device concepts for PiN diodes, IGBTs, and power MOSFETs, are discussed. Apart from silicon, wide bandgap semiconductors are considered.

Objective

The goal of this course is developing an understanding of modern power device concepts. After following the course, the student will be able to choose a power device for an application, know the basic functionality, and is able to describe the performance and reliability related building blocks of the device design. Furthermore, the student will have an understanding of current and future developments in power devices.

Content

Basic semiconductor device physics is revisited. After defining requirements from typical applications, the key building blocks - especially active area and termination - of power devices are introduced. Based on these building blocks, device concepts are derived. Introducing unipolar as well as bipolar conduction is increasing the application space for power devices. Rectifiers, such as Schottky barrier and PiN diodes, and switches, such as IGBTs and power MOSFETs are discussed in detail. For each device concept, a tradeoff analysis for performance and reliability based on the layout of the building blocks is discussed. Apart from silicon, wide bandgap semiconductors play an increasing role for highly efficient power electronic devices. This development is taken into account by discussing the specific advantages and challenges in current wide bandgap based devices.

Resources

Lecture Notes

Will be distributed at lectures.

Literature

The course follows a collection of different books; more details are being listed in the script.

General Information

Language: English
Levels: BSC , MSC
Frequency: Yearly recurring

Examination

Type: session examination
Mode: written 180 minutes
Aids: Personal summary (max. 2 printed pages A4 single sided), non-programmable calculator, no communication devices!

Course Components

Type	Title	Time & Place	Hours
lecture with exercise	Power Semiconductors	Tue 13:15-15:00 (CAB G 59) Tue 15:15-17:00 (CAB G 59)	4 h weekly

Offered In

Electrical Engineering and Information Technology Bachelor
- Third Year Core Courses (Can be freely combined, a list of recommendations is available under )
Electrical Engineering and Information Technology Master
- Master Studies (Programme Regulations 2018)
  - Energy and Power Electronics (The core courses and specialization courses below are a selection for students who wish to specialize in the area of "Energy and Power Electronics", see . The individual study plan is subject to the tutor's approval.)
    - Core Courses (These core courses are particularly recommended for the field of "Energy and Power Electronics". You may choose core courses form other fields in agreement with your tutor. A minimum of 24 credits must be obtained from core courses during the MSc EEIT.)
      - Foundation Core Courses
- Master Studies (Programme Regulations 2008)
  - Major Courses (A total of 42 CP must be achieved form courses during the Master Program. The individual study plan is subject to the tutor's approval.)
    - Energy and Power Electronics
      - Recommended Subjects (These courses are recommended, but you are free to choose courses from any other special field. Please consult your tutor.)