VVZ API is not affiliated with ETH Zurich. Data might be outdated or incorrect. Please view the official ETHZ Vorlesungsverzeichnis for binding information.
Smart-power Semiconductor Devices
Smart Power Semiconductor Devices
Last Updated: 2026-02-05 14:57:24
Objective
The students shall get acquainted with the most important electrical characteristics of power semiconductor devices, based on the electronic phenomena associated with them. This knowledge should help the future applications engineer to judge the device performance as well as to apply these devices professionally.
Content
On one hand, some of the most relevant physical phenomena related to power semiconductor devices shall be reviewed. On the other hand, the connection between electronic processes and their influence on the electrical device characteristic shall be considered. The most important modern power devices that are commercially available will be discussed and their performance compared (e.g. conventional thyristor, Gate-Turn-Off thyristor/GTO, bipolar and field effect power transistors, bipolar devices with field effect control like the Insulated Gate Bipolar Transistor/IGBT). This lecture may be considered complementary to the courses "Power Electronics" and "Power Electronic Systems".
Resources
Lecture Notes
Supplement to lecture (approx. 250 p.)
General Information
- Language
- German
- Frequency
- Every two years
Examination
- Type
- session examination
- Mode
- oral 30 minutes
Course Components
| Type | Title | Time & Place | Hours |
|---|---|---|---|
| lecture with exercise |
Smart Power Semiconductor Devices
Does not take place this semester.
|
No time listed | 4 h weekly |